Manufacturer Part Number
CY7C1019D-10ZSXI
Manufacturer
Infineon Technologies
Introduction
High-speed CMOS SRAM with 1Mbit storage
Product Features and Performance
Asynchronous SRAM
1Mbit storage capacity
Parallel memory interface
Access Time of 10 ns
Surface Mount 32-SOIC packaging
Operational at 4.5V to 5.5V supply voltage
Suitable for operating temperatures from -40°C to 85°C
Product Advantages
Quick data access with 10ns cycle time
Robust temperature range for varied environments
Easy to implement with parallel interface
High reliability and stability in operation
Key Technical Parameters
Memory Size: 1Mbit
Memory Organization: 128K x 8
Write Cycle Time: 10ns
Access Time: 10ns
Voltage Supply Range: 4.5V to 5.5V
Operating Temperature Range: -40°C to 85°C
Mounting Type: Surface Mount
Package Type: 32-SOIC
Quality and Safety Features
Compliance with stringent industry standards
Compatibility
Compatible with systems requiring high-speed volatile memory
Parallel interface for broad device interoperability
Application Areas
High-performance computing
Communications equipment
Industrial control systems
Medical electronics
Automotive systems
Product Lifecycle
Obsolete status
Consider checking for newer replacements or upgrades
Several Key Reasons to Choose This Product
High-speed access time suitable for performance-intensive applications
Stable operation over a wide temperature range
Compliance with industrial standards for quality and safety
Easy system integration with surface mount packaging
Proven track record of reliability from Infineon Technologies