CY7C1019DV33-10BVXIT - Infineon Technologies

Manufacturer Part Number

CY7C1019DV33-10BVXIT

Manufacturer

Infineon Technologies

Introduction

The CY7C1019DV33-10BVXIT is a high-performance 1Mbit SRAM designed for ease of integration and low latency data storage.

Product Features and Performance

Memory Type: Volatile SRAM - Asynchronous

Memory Format: SRAM

Memory Size: 1Mbit

Memory Organization: 128K x 8

Memory Interface: Parallel

Write Cycle Time - Word, Page: 10ns

Access Time: 10 ns

Voltage Supply: 3V ~ 3.6V

Operating Temperature: -40°C ~ 85°C (TA)

Mounting Type: Surface Mount

Package/Case: 48-VFBGA

Supplier Device Package: 48-VFBGA (6x8)

Product Advantages

Designed for rapid access and high-speed operations

Optimized for power-sensitive applications with a low voltage supply requirement

Robust temperature range supporting extreme environmental conditions

Key Technical Parameters

Memory Size: 1Mbit

Access Time: 10 ns

Write Cycle Time: 10 ns

Voltage - Supply: 3V ~ 3.6V

Operating Temperature: -40°C ~ 85°C

Quality and Safety Features

Robust build meeting industrial standards for memory devices

Rated for operation across a wide temperature range, ensuring reliability under varying environmental conditions

Compatibility

Compatible with various microcontrollers and processors that support a parallel memory interface

Application Areas

Telecommunications

Automotive electronics

Data storage systems

Industrial automation systems

Product Lifecycle

Status: Active

This model is currently in active production with no near-term forecast of discontinuation

Several Key Reasons to Choose This Product

Fast access and write times (10 ns) ideal for high-performance applications

Stable performance in extreme conditions from -40°C to 85°C

Low power requirement enhances compatibility with battery-operated devices

Offers a reliable data storage solution with advanced SRAM technology

Robust package and high compatibility with standard hardware interfaces