Manufacturer Part Number
CY7C1019D-10VXIT
Manufacturer
Infineon Technologies
Introduction
CY7C1019D-10VXIT is a high-performance SRAM device especially suitable for high-speed applications requiring stable and reliable memory data storage.
Product Features and Performance
Memory Type: Volatile
Memory Format: SRAM - Asynchronous
Memory Size: 1Mbit
Memory Organization: 128K x 8
Memory Interface: Parallel
Technology: SRAM - Asynchronous
Write Cycle Time - Word, Page: 10ns
Access Time: 10 ns
Voltage - Supply: 4.5V ~ 5.5V
Product Advantages
Offers fast access and write times
Optimized for high-speed data storage and retrieval
Robust for various environmental conditions
Key Technical Parameters
Memory Size: 1Mbit
Memory Organization: 128K x 8
Access Time: 10 ns
Write Cycle Time: 10 ns
Voltage - Supply Range: 4.5V to 5.5V
Operating Temperature Range: -40°C to 85°C
Quality and Safety Features
Operating Temperature: -40°C ~ 85°C (TA)
Packaged in Tape & Reel (TR) to ensure safe transportation and reliability during assembly
Compatibility
Interface compatible with various standard parallel memory interfaces
Mounting Type: Surface Mount
Package / Case: 32-BSOJ (0.400”, 10.16mm Width)
Application Areas
Suitable for high-speed computing, industrial control systems, and automotive use where reliability and speed are critical
Product Lifecycle
Product Status: Last Time Buy
Customers should identify last needs or look for replacements / upgrades as the product is nearing discontinuation
Several Key Reasons to Choose This Product
High-speed access and write capabilities of 10 ns ensure minimal delay in volatile memory operations
Reliability tested at temperature ranges from -40°C to 85°C allowing for use in various environmental conditions
Ease of integration with standard parallel interfaces and surface mount packaging simplifies board design
Backed by Infineon Technologies’ reputation for quality in semiconductor and memory products