Manufacturer Part Number
CY7C1019DV33-10BVXI
Manufacturer
Infineon Technologies
Introduction
This is a high-performance, low-power SRAM (Static Random Access Memory) integrated circuit from Infineon Technologies.
Product Features and Performance
Asynchronous SRAM with 1Mbit memory capacity
10ns access time
Parallel memory interface
10ns write cycle time for word and page
128K x 8 memory organization
Operates on a supply voltage of 3V to 3.6V
Wide operating temperature range of -40°C to 85°C
Product Advantages
High-speed performance with 10ns access time
Low power consumption
Wide operating temperature range suitable for various applications
Reliable and robust design
Key Technical Parameters
Memory Type: Volatile SRAM
Memory Size: 1Mbit
Memory Interface: Parallel
Access Time: 10ns
Write Cycle Time: 10ns
Supply Voltage: 3V to 3.6V
Operating Temperature: -40°C to 85°C
Quality and Safety Features
RoHS3 compliant
48-VFBGA (6x8) package
Compatibility
This SRAM IC is compatible with a wide range of electronic systems and devices that require high-performance, low-power volatile memory.
Application Areas
Embedded systems
Industrial automation
Telecommunications equipment
Consumer electronics
Automotive electronics
Product Lifecycle
This SRAM IC is currently in active production and is not nearing discontinuation. Replacement or upgrade options may be available from Infineon Technologies or the broader semiconductor market.
Key Reasons to Choose This Product
High-speed performance with 10ns access time
Low power consumption, enabling energy-efficient designs
Wide operating temperature range, making it suitable for a variety of applications
Reliable and robust design with RoHS3 compliance
Compatibility with a wide range of electronic systems and devices
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