Manufacturer Part Number
MMBTA06LT1
Manufacturer
Infineon Technologies
Introduction
High-performance NPN bipolar junction transistor (BJT) optimized for switching and amplification applications.
Product Features and Performance
225 mW maximum power dissipation
80 V maximum collector-emitter breakdown voltage
500 mA maximum collector current
100 nA maximum collector-emitter cutoff current
250 mV maximum collector-emitter saturation voltage @ 10 mA, 100 mA
100 minimum DC current gain (hFE) @ 100 mA, 1 V
100 MHz transition frequency
Product Advantages
Excellent switching and amplification performance
Small form factor surface mount package
High breakdown voltage and current handling capability
Key Technical Parameters
Bipolar junction transistor (BJT) type: NPN
Power dissipation: 225 mW
Collector-emitter breakdown voltage: 80 V
Collector current: 500 mA
Collector-emitter cutoff current: 100 nA
Collector-emitter saturation voltage: 250 mV
DC current gain (hFE): 100
Transition frequency: 100 MHz
Quality and Safety Features
Compliant with RoHS directive (RoHS non-compliant)
Packaged in SOT-23-3 (TO-236) surface mount case
Compatibility
Can be used in a wide range of electronic circuits and applications
Application Areas
Switching and amplification in electronic devices
Power management circuits
Audio and video amplifiers
General-purpose electronics
Product Lifecycle
Mature product, not nearing discontinuation
Replacement and upgrade options available
Key Reasons to Choose This Product
Excellent electrical performance for switching and amplification
Small size and surface mount packaging for compact designs
High breakdown voltage and current handling capability
Proven reliability and availability from a trusted manufacturer