Manufacturer Part Number
MMBTA06WT1G
Manufacturer
onsemi
Introduction
Discrete Semiconductor Product
Bipolar Junction Transistor (BJT), Single
Product Features and Performance
Designed for general-purpose amplifier and switching applications
High breakdown voltage of 80V
Low collector-emitter saturation voltage
Wide operating temperature range of -55°C to 150°C
Product Advantages
Reliable and robust performance
Compact surface mount packaging
Complies with RoHS3 directive
Key Technical Parameters
Power Rating: 150mW
Collector-Emitter Breakdown Voltage: 80V
Collector Current (Max): 500mA
Collector Cutoff Current (Max): 100nA
DC Current Gain (hFE): Minimum 100 @ 100mA, 1V
Transition Frequency: 100MHz
Quality and Safety Features
RoHS3 compliant
Suitable for reflow soldering
Compatibility
Compatible with a wide range of electronic circuits and applications
Application Areas
General-purpose amplifier and switching applications
Consumer electronics
Industrial control systems
Product Lifecycle
Currently available
No information on pending discontinuation
Several Key Reasons to Choose This Product
Reliable and robust performance
High breakdown voltage and low saturation voltage
Wide operating temperature range
Compact surface mount packaging
RoHS3 compliance