MMBTA06LT1G - onsemi

Manufacturer Part Number

MMBTA06LT1G

Manufacturer

onsemi

Introduction

A bipolar junction transistor (BJT) in the NPN configuration designed for general-purpose amplifier and switching applications.

Product Features and Performance

Capable of operating at high voltages up to 80V

Supports collector currents up to 500mA

Exhibits a high current gain (hFE) of at least 100 at 100mA and 1V

Operates at high frequencies up to 100MHz

Provides low collector-emitter saturation voltage of 250mV at 10mA and 100mA

Product Advantages

Compact surface-mount SOT-23-3 package

Suitable for automated assembly

Wide operating temperature range of -55°C to 150°C

Compliant with RoHS3 environmental standards

Key Technical Parameters

Voltage Collector Emitter Breakdown (Max): 80V

Current Collector (Ic) (Max): 500mA

Current Collector Cutoff (Max): 100nA

Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA

DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V

Frequency Transition: 100MHz

Power Max: 225mW

Quality and Safety Features

Designed and manufactured to meet RoHS3 compliance

Packaged in a reliable and durable SOT-23-3 surface-mount package

Compatibility

This transistor is compatible with various electronic circuits and systems that require a general-purpose NPN bipolar junction transistor.

Application Areas

Amplifier circuits

Switching applications

General-purpose electronic devices

Product Lifecycle

The MMBTA06LT1G is an active and widely available product. Replacements and upgrades may be available from onsemi or other manufacturers.

Key Reasons to Choose This Product

High voltage and current capability

Excellent current gain and high-frequency performance

Compact and suitable for automated assembly

Wide operating temperature range

Compliance with RoHS3 environmental standards

Reliable and durable packaging