MMBTA06-7-F - Diodes Incorporated

Manufacturer Part Number

MMBTA06-7-F

Manufacturer

Diodes Incorporated

Introduction

Single NPN Bipolar Junction Transistor (BJT)

Product Features and Performance

Low Collector-Emitter Saturation Voltage

High Collector Current Capability

Wide Operating Temperature Range: -55°C to +150°C

High Transition Frequency: 100MHz

Product Advantages

Excellent switching performance

Suitable for a wide range of applications

Compact and space-efficient design

Key Technical Parameters

Power Max: 300mW

Voltage Collector Emitter Breakdown (Max): 80V

Current Collector (Ic) (Max): 500mA

Current Collector Cutoff (Max): 100nA

DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V

Frequency Transition: 100MHz

Quality and Safety Features

RoHS3 Compliant

Reliable and durable performance

Compatibility

Suitable for use in a wide range of electronic circuits and devices

Application Areas

Switching circuits

Amplifier circuits

General-purpose electronic applications

Product Lifecycle

Currently available

No plans for discontinuation

Several Key Reasons to Choose This Product

Excellent switching performance and high current capability

Wide operating temperature range for versatile applications

Compact and space-efficient design

Reliable and RoHS3 compliant for quality and safety

Suitable for a wide range of electronic circuits and devices