MMBTA06LT3G - onsemi

Manufacturer Part Number

MMBTA06LT3G

Manufacturer

onsemi

Introduction

This is a single NPN bipolar junction transistor (BJT) in a SOT-23-3 (TO-236) package.

Product Features and Performance

Operates over a wide temperature range of -55°C to 150°C

Maximum power dissipation of 225 mW

Maximum collector-emitter breakdown voltage of 80 V

Maximum collector current of 500 mA

Minimum DC current gain (hFE) of 100 @ 100 mA, 1 V

Transition frequency of 100 MHz

Product Advantages

Compact SOT-23-3 surface mount package

RoHS3 compliant

Suitable for a variety of applications

Key Technical Parameters

Collector-Emitter Breakdown Voltage (Max): 80 V

Collector Current (Max): 500 mA

Collector Cutoff Current (Max): 100 nA

Collector-Emitter Saturation Voltage (Max): 250 mV @ 10 mA, 100 mA

DC Current Gain (hFE) (Min): 100 @ 100 mA, 1 V

Transition Frequency: 100 MHz

Quality and Safety Features

RoHS3 compliant

Suitable for high-temperature operation

Compatibility

Compatible with various electronic circuits and devices

Application Areas

Suitable for use in a variety of electronic circuits, including amplifiers, switches, and logic gates

Product Lifecycle

This product is currently available and not nearing discontinuation.

Several Key Reasons to Choose This Product

Wide operating temperature range (-55°C to 150°C)

High power handling capability (225 mW)

High breakdown voltage (80 V)

High DC current gain (minimum of 100)

High transition frequency (100 MHz)

Compact surface mount package

RoHS3 compliant