MMBTA13LT1G - onsemi

Manufacturer Part Number

MMBTA13LT1G

Manufacturer

onsemi

Introduction

Small-signal NPN Darlington transistor

Product Features and Performance

Provides high current gain for low drive applications

Allows for high collector-emitter breakdown voltage

Exhibits low collector-emitter saturation voltage

Operates over a wide temperature range of -55°C to 150°C

Product Advantages

Compact SOT-23-3 package allows for small footprint designs

High current gain for efficient amplification and switching

Suitable for low-power, high-gain applications

Key Technical Parameters

Collector-Emitter Breakdown Voltage (VCEO): 30V

Collector Current (IC): 300mA

DC Current Gain (hFE): 10,000 @ 100mA, 5V

Transition Frequency (fT): 125MHz

Power Dissipation: 225mW

Quality and Safety Features

RoHS3 compliant

Reliable performance over wide temperature range

Compatibility

Compatible with various electronic circuits and applications

Application Areas

Low-power amplifiers and switches

Sensor and control systems

Automotive electronics

Consumer electronics

Product Lifecycle

Currently in active production

Replacement and upgrade options available

Key Reasons to Choose This Product

Compact size and high current gain for efficient designs

Robust performance over wide temperature range

Reliable and RoHS3 compliant for quality applications

Suitable for a variety of low-power, high-gain electronic circuits