MMBTA14LT1 - onsemi

Manufacturer Part Number

MMBTA14LT1

Manufacturer

onsemi

Introduction

Discrete Semiconductor Product

Bipolar Junction Transistor (BJT) Single

Product Features and Performance

RoHS non-compliant

SOT-23-3 (TO-236) package

Operating Temperature: -55°C to 150°C

Power Rating: 225 mW

Collector-Emitter Breakdown Voltage: 30 V

Collector Current (Max): 300 mA

Collector-Emitter Saturation Voltage: 1.5 V @ 100 mA, 100 μA

Transistor Type: NPN Darlington

DC Current Gain (hFE): 10000 min @ 10 mA, 5 V

Transition Frequency: 125 MHz

Surface Mount Mounting

Product Advantages

High current gain

High speed switching

Small package size for compact designs

Key Technical Parameters

Power Rating

Voltage and Current Ratings

Saturation Voltage

Current Gain

Transition Frequency

Quality and Safety Features

RoHS non-compliant

Compatibility

Compatible with standard bipolar transistor applications

Application Areas

General-purpose amplifier and switch applications

Industrial and consumer electronics

Product Lifecycle

Active product

Replacement parts and upgrades may be available

Reasons to Choose This Product

High current gain for efficient amplification

Fast switching speed for high-frequency applications

Small footprint for space-constrained designs

Suitable for a wide range of general-purpose transistor uses