IR2181STRPBF - Infineon Technologies

Manufacturer Part Number

IR2181STRPBF

Manufacturer

infineon-technologies

Introduction

The IR2181STRPBF is a high-performance gate driver designed for power management applications, suitable for driving IGBTs and N-Channel MOSFETs in a half-bridge configuration.

Product Features and Performance

Independent channel type

Capable of driving two devices

Supporting high-side voltage up to 600V (Bootstrap)

Rapid rise and fall times of 40ns and 20ns respectively

Operational across a wide temperature range from -40°C to 150°C

Product Advantages

Efficient drive of IGBT and N-Channel MOSFET gate types

High peak output currents of 1.9A (source) and 2.3A (sink)

Robust performance in extreme temperature conditions

Key Technical Parameters

Driven Configuration: Half-Bridge

Voltage - Supply: 10V ~ 20V

Logic Voltage - VIL, VIH: 0.8V, 2.7V

Current - Peak Output (Source, Sink): 1.9A, 2.3A

High Side Voltage - Max (Bootstrap): 600V

Rise / Fall Time (Typ): 40ns, 20ns

Quality and Safety Features

Built to withstand high voltages up to 600V

Designed for reliable performance in temperatures ranging from -40°C to 150°C

Compatibility

Compatible with IGBT and N-Channel MOSFET gate types

Application Areas

Power management solutions

Industrial motor drives and controls

Converter and inverter systems

Product Lifecycle

This product is currently active and not near discontinuation. Replacements and upgrades available.

Several Key Reasons to Choose This Product

High performance and reliability for driving power MOSFETS and IGBTs

Supports a wide range of supply voltages and logic input levels

Capable of handling high-side voltages effectively

Designed to operate efficiently even in extreme temperatures

Offers fast switching with low rise and fall times for improved performance