IR21814SPBF - Infineon Technologies

Manufacturer Part Number

IR21814SPBF

Manufacturer

Infineon Technologies

Introduction

The IR21814SPBF is a high-voltage, high-speed power MOSFET and IGBT driver with independent high and low side referenced output channels.

Product Features and Performance

Independent high-side and low-side channels

Operates up to 600V

Tolerant to negative transient voltage

dV/dt immune

Product Advantages

Integrated under-voltage lockout protections

High pulse current during turn-on and turn-off stages

Matched propagation delay for both channels

3V and 5V input logic compatible

Key Technical Parameters

Half-Bridge driven configuration

Number of Drivers: 2

Gate Type: IGBT, N-Channel MOSFET

Voltage - Supply: 10V ~ 20V

Logic Voltage - VIL, VIH: 0.8V, 2.7V

Current - Peak Output (Source, Sink): 1.9A, 2.3A

Input Type: Non-Inverting

High Side Voltage - Max (Bootstrap): 600V

Rise / Fall Time (Typ): 40ns / 20ns

Operating Temperature: -40°C ~ 150°C

Quality and Safety Features

Over-temperature and over-current protection

Shutdown features due to under-voltage lockout (UVLO)

Compatibility

Suitable for driving IGBT and N-Channel MOSFETs in a half-bridge configuration

Compatible with 3.3V and 5V logic inputs

Application Areas

Motor drives

DC-DC and AC-DC converters

Induction heating

Inverters for renewable energy sources

Product Lifecycle

Not For New Designs (existing projects may continue but not recommended for new designs)

Check for potential replacements or upgrades

Several Key Reasons to Choose This Product

High integration level reduces complexity and BOM count

Robust design ensures reliability in harsh conditions

High switching speed suitable for high-frequency applications

Tailored for high-side and low-side gate drive applications

Built-in protections enhance system safety and longevity