IR21814S - Infineon Technologies

Manufacturer Part Number

IR21814S

Manufacturer

Infineon Technologies

Introduction

The IR21814S is a high voltage, high speed power MOSFET and IGBT driver with independent high and low side referenced output channels.

Product Features and Performance

Drives both N-channel MOSFET and IGBT gates

High side driver voltage up to 600V

3V and 5V input logic compatible

Output source/sink current capability of 1.9A/2.3A

Cross-conduction prevention logic

Matched propagation delay for both channels

Under-voltage lockout for both channels

Product Advantages

Integrated bootstrap diode

High pulse current during the short switching times

Tolerant to negative transient voltage, dV/dt immune

High efficiency due to low turn-on and turn-off time

Extended operating temperature range of -40°C to 150°C

Key Technical Parameters

Driven Configuration: Half-Bridge

Channel Type: Independent

Number of Drivers: 2

Gate Type: IGBT, N-Channel MOSFET

Voltage - Supply: 10V ~ 20V

Logic Voltage - VIL, VIH: 0.8V, 2.7V

Current - Peak Output: 1.9A (source), 2.3A (sink)

Input Type: Non-Inverting

High Side Voltage - Max (Bootstrap): 600V

Rise / Fall Time (Typ): 40ns/20ns

Quality and Safety Features

Integrated under-voltage lockout protection

Over-temperature protection

Shutdown feature turns off both channels

Compatibility

Compatible with logic levels of 3.3V or 5V

Application Areas

Motor drives

DC-DC converters

High-frequency power converters and inverters

Product Lifecycle

Status: Obsolete

Replacement products may be available, consult Infineon for alternatives

Several Key Reasons to Choose This Product

Robust output drivers capable of high switching speeds

Ability to work at high temperatures, making it suitable for challenging environments

High voltage capability for high power applications

Ease of use with standard logic level inputs

Surface mount package for compact PCB design

Integrated bootstrap diode to simplify circuit design