Manufacturer Part Number
IR2181SPBF
Manufacturer
Infineon Technologies
Introduction
Integrated circuit (IC) designed for gate driving applications
Product Features and Performance
Supports IGBT and N-Channel MOSFET gate driving
Independent dual-channel design
High-side voltage up to 600V
Programmable dead-time between high-side and low-side
Low propagation delay and fast rise/fall times
Product Advantages
Compact 8-SOIC package
Wide operating temperature range (-40°C to 150°C)
RoHS3 compliant
Key Technical Parameters
Supply voltage: 10V to 20V
Logic voltage (VIL, VIH): 0.8V, 2.7V
Peak output current (source, sink): 1.9A, 2.3A
Rise/fall time (typical): 40ns, 20ns
Quality and Safety Features
Robust design for reliable operation
Overcurrent protection and undervoltage lockout
Compatibility
Wide range of IGBT and MOSFET gate drive applications
Application Areas
Motor drives, power supplies, welding equipment, and other industrial applications
Product Lifecycle
Current product, no plans for discontinuation
Replacement or upgrade options available from Infineon
Reasons to Choose This Product
Compact and efficient gate driver solution
High-performance with fast switching and high voltage capability
Robust and reliable design for demanding applications
Wide operating temperature range and RoHS compliance