Manufacturer Part Number
IR21814STRPBF
Manufacturer
Infineon Technologies
Introduction
The IR21814STRPBF is a high-voltage, high-performance gate driver specifically designed for half-bridge configurations, capable of driving IGBT and N-Channel MOSFETs.
Product Features and Performance
Driven Configuration: Half-Bridge
Channel Type: Independent
Number of Drivers: 2
Gate Type: Compatible with IGBT and N-Channel MOSFET
Voltage Supply Range: 10V to 20V
Logic Voltage VIL, VIH: 0.8V, 2.7V
Current Peak Output (Source, Sink): 1.9A, 2.3A
Input Type: Non-Inverting
High Side Voltage Max (Bootstrap): 600V
Rise / Fall Time (Typ): 40ns, 20ns
Operating Temperature: -40°C to 150°C
Mounting Type: Surface Mount
Package / Case: 14-SOIC
Product Advantages
High peak current capability enhances robustness
Dual independent channels provide flexibility in application
High bootstrap voltage capability for high-side MOSFET and IGBT control
Wide temperature range for extreme condition usage
Fast rise and fall times for quick switching
Key Technical Parameters
Voltage Supply: 10V ~ 20V
High Side Voltage Max (Bootstrap): 600 V
Peak Output Current: 1.9A Source, 2.3A Sink
Operating Temperature: -40°C ~ 150°C
Quality and Safety Features
Extended temperature operation for reliability in industrial environments
High bootstrap voltage handling for added operational safety
Compatibility
Compatible with IGBT and N-Channel MOSFET
Application Areas
Motor Drive & Control
Power Supply Design
Renewable Energy Systems
Industrial Automation
Product Lifecycle
Status: Active
Not nearing discontinuation, with ongoing production and support
Several Key Reasons to Choose This Product
Wide supply and logic voltage levels for compatibility with various circuits
High current capability aids in driving larger transistors efficiently
Fast switching with minimal rise and fall times reduces losses and improves efficiency
Robust operational thresholds suitable for high-demand applications
Surface mount package aids in compact and efficient design integration