IR2110STRPBF - Infineon Technologies

Manufacturer Part Number

IR2110STRPBF

Manufacturer

Infineon Technologies

Introduction

The IR2110STRPBF is a high-power, high-speed gate driver designed for driving half-bridge circuits with IGBTs and N-Channel MOSFETs, applicable in various high-performance switching applications.

Product Features and Performance

Designed for half-bridge circuits

Independent channel configuration

Can drive 2 separate channels

Compatible with IGBTs and N-Channel MOSFETs

Supports a supply voltage range of 3.3V to 20V

Logic input thresholds at 6V (VIL) and 9.5V (VIH)

Peak output currents of 2A (source) and 2A (sink)

Non-inverting input type

Maximum high side voltage (bootstrap) up to 500V

Fast rise and fall times of 25ns and 17ns respectively

Robust operating temperature range from -40°C to 150°C

Product Advantages

Efficient power handling and switching

High durability and reliability for extreme conditions

Fast switching capabilities enhance performance in high-frequency applications

Capable of driving high voltage and current configurations

Adaptability to diverse power management setups

Key Technical Parameters

Driven Configuration: Half-Bridge

Number of Drivers: 2

Gate Type: IGBT, N-Channel MOSFET

Voltage - Supply: 3.3V ~ 20V

Current - Peak Output (Source, Sink): 2A, 2A

High Side Voltage - Max (Bootstrap): 500 V

Rise / Fall Time (Typ): 25ns, 17ns

Operating Temperature: -40°C ~ 150°C

Quality and Safety Features

Surface mount technology for secure and reliable mounting

Optimized for high-temperature performance

Compatibility

Suitable for use with IGBTs and N-Channel MOSFETs in high-frequency power conversion technologies

Application Areas

High-frequency power converters

Motor drives and controllers

Inverters for renewable energy systems

High-performance switching applications

Product Lifecycle

Status: Active

Not nearing discontinuation

Availability of replacements or upgrades as technology progresses

Several Key Reasons to Choose This Product

Highly versatile with a broad operational voltage range

Optimal for high power and high-frequency electronic applications

Dual independent channel capability increases design flexibility

Exceptional thermal and electrical performance characteristics

Fosters innovation in power management through advanced gate control