IR2111PBF - Infineon Technologies

Manufacturer Part Number

IR2111PBF

Manufacturer

Infineon Technologies

Introduction

High voltage, high-speed power MOSFET and IGBT driver with independent high and low side referenced output channels

Product Features and Performance

Integrated half-bridge driver

Synchronous channel type

Supports IGBT and N-Channel MOSFET gate driving

Non-inverting input type

High side voltage allows for up to 600V with bootstrap circuit configuration

Fast rise and fall times for optimized switching performance

Product Advantages

Capable of driving high voltage power devices

Efficient for compact and space-sensitive applications due to through-hole mounting

Enhanced system reliability through the separation of high and low side drivers

Under-voltage lockout for both channels

Key Technical Parameters

2 output drivers

Supply voltage range from 10V to 20V

Logic voltage thresholds VIL at 8.3V and VIH at 12.6V

Peak output currents of 250mA (source) and 500mA (sink)

Rise time typically 80ns, fall time typically 40ns

Operating temperature range from -40°C to 150°C

Quality and Safety Features

Overcurrent shutdown

Under-voltage lockout

Matches stringent industrial quality and safety standards

Compatibility

Compatible with 8-PDIP mounting and packaging standards

Also matches 8-DIP package casings

Application Areas

Switch mode power supplies

Motor drives

High-voltage power control systems

Product Lifecycle

Product status indicates "Not For New Designs"

Replacement and upgrade options may be available from the manufacturer

Several Key Reasons to Choose This Product

Durable construction suitable for tough industrial environments

Excellent thermal performance for a wide temperature range

High-speed operation to improve overall system efficiency

Ease of use with non-inverting input compatibility

Reliable high-side drive with bootstrap methodology

Coherent power distribution for half-bridge topologies