Manufacturer Part Number
IR2111STRPBF
Manufacturer
Infineon Technologies
Introduction
High voltage, high speed power MOSFET and IGBT driver with independent high and low side referenced output channels
Product Features and Performance
High voltage capability — up to 600V for high side
Synchronous operation of half-bridge topology
Separate logic and power grounds to minimize switching noise
Internal 500mA and 250mA sink and source peak current capability per channel
Suitable for driving IGBT and N-Channel MOSFET gates
Matched propagation delay for both channels
CMOS/LSTTL compatible inputs with hysteresis
Under-voltage lockout for both channels
Product Advantages
Improves the efficiency of power conversion systems
Simplifies gate driving circuit complexity
Ensures reliable and robust operation in high-frequency applications
Enables the use of bootstrap power supply for high side driving
Low power consumption due to efficient design
Key Technical Parameters
Voltage Supply: 10V ~ 20V
Logic Voltage VIL, VIH: 8.3V, 12.6V
Current Peak Output (Source, Sink): 250mA, 500mA
High Side Voltage Max (Bootstrap): 600V
Rise / Fall Time (Typ): 80ns, 40ns
Operating Temperature: -40°C ~ 150°C (TJ)
Quality and Safety Features
Built-in under voltage lockout function
Lead-free, RoHS compliant
Over-temperature protection
Compatibility
Compatible with various types of IGBTs and N-Channel MOSFETs
Application Areas
Switching power supplies
Motor drives
DC-DC converters
Class D audio amplifiers
Product Lifecycle
Product Status: Active
Not nearing discontinuation
Supports long-term availability for industrial designs
Several Key Reasons to Choose This Product
Highly integrated half-bridge driver reducing external component count
Flexibility to drive a wide range of MOSFETs and IGBTs
High voltage capability suitable for industrial applications
Fast switching speeds mitigate power losses
Wide operating temperature range suitable for harsh environments
Infineon Technologies' reputation for quality and reliability