IR2111STR - Infineon Technologies

Manufacturer Part Number

IR2111STR

Manufacturer

Infineon Technologies

Introduction

The IR2111STR is a high-voltage, high-speed power MOSFET and IGBT driver with independent high and low side referenced output channels. It is designed to drive small to medium power loads such as IGBT and power MOSFETs. The device features a variety of protection functions and high-speed performance.

Product Features and Performance

Driven Configuration: Half-Bridge

Channel Type: Synchronous

Number of Drivers: 2

Gate Type: IGBT, N-Channel MOSFET

Voltage Supply: 10V ~ 20V

Logic Voltage VIL, VIH: 8.3V, 12.6V

Current Peak Output (Source, Sink): 250mA, 500mA

Input Type: Non-Inverting

High Side Voltage Max (Bootstrap): 600 V

Rise / Fall Time (Typ): 80ns, 40ns

Operating Temperature: -40°C ~ 150°C (TJ)

Product Advantages

Independent high and low side referenced output channels

Integrated bootstrap diode

Undervoltage lockout

Shoot-through protection

Crossover current protection

Key Reasons to Choose

High-speed and high-voltage performance

Comprehensive protection features

Suitable for driving small to medium power loads

Reliable and robust design

Quality and Safety Features

Robust surface mount package (8-SOIC)

Designed for high reliability and long lifespan

Compatibility

Compatible with IGBT and N-Channel MOSFET gate driver applications

Application Areas

Motor drives

Uninterruptible power supplies (UPS)

Switched-mode power supplies (SMPS)

Induction heating

Other power conversion and control applications

Product Lifecycle

The IR2111STR is an obsolete product. Customers should contact our website's sales team for information on available alternative or replacement models.