Manufacturer Part Number
IR2110-2PBF
Manufacturer
Infineon Technologies
Introduction
The IR2110-2PBF is a high-voltage, high-speed power MOSFET and IGBT driver with independent high and low-side referenced output channels. It is designed to drive a wide range of power semiconductors such as power MOSFETs and IGBTs in a half-bridge configuration.
Product Features and Performance
Dual-channel MOSFET/IGBT driver
Supports independent high and low-side gate driving
Wide supply voltage range of 3.3V to 20V
High-side driver voltage rating up to 500V
Peak output current of 2A (source and sink)
Fast rise and fall times of 25ns and 17ns, respectively
-40°C to 150°C operating temperature range
Through-hole 16-DIP package
Product Advantages
Robust and reliable design for high-power applications
Flexible configuration for driving a variety of power semiconductors
High-speed switching for efficient power conversion
Wide operating voltage and temperature range
Key Reasons to Choose This Product
Industry-leading driver performance and reliability
Versatile for use in numerous power electronics applications
Cost-effective solution for high-power systems
Proven track record of Infineon Technologies' engineering expertise
Quality and Safety Features
Robust overcurrent protection
Thermal shutdown protection
Corrosion-resistant package
Compatibility
The IR2110-2PBF is compatible with a wide range of power semiconductors, including power MOSFETs and IGBTs, in a half-bridge configuration.
Application Areas
Switch-mode power supplies
Motor drives
Inverters
Uninterruptible power supplies (UPS)
Industrial automation and control systems
Product Lifecycle
The IR2110-2PBF is an obsolete product, meaning it is no longer in active production. However, Infineon Technologies offers several equivalent and alternative models with similar functionality and performance characteristics. Customers are advised to contact our website's sales team for more information on available options.