IR2109STRPBF - Infineon Technologies

Manufacturer Part Number

IR2109STRPBF

Manufacturer

Infineon Technologies

Introduction

High-performance half-bridge gate driver designed for power management applications.

Product Features and Performance

Driven Configuration is Half-Bridge

Channel Type is Synchronous

Number of Drivers is 2

Supports IGBT and N-Channel MOSFET Gate Types

Voltage Supply Range from 10V to 20V

Logic Voltage Levels VIL at 0.8V and VIH at 2.9V

Peak Output Current of 200mA (Source), 350mA (Sink)

Input Type is Non-Inverting

Bootstrap High Side Voltage up to 600V

Rise Time of 150ns and Fall Time of 50ns

Product Advantages

High Integration with Dual Drivers

Designed for High-Speed Operations

Robust High-Side Voltage Handling

Fast Switching Performance with Low Rise and Fall Times

Thermal Performance for Extended Temperature Range

Key Technical Parameters

Supply Voltage 10V to 20V

Logic Voltage Levels VIL 0.8V, VIH 2.9V

Peak Output Current 200/350mA

High Side Voltage Max 600V

Operational Rise/Fall Time 150ns/50ns

Quality and Safety Features

Extended Operating Temperature Range of -40°C to +150°C

Surface Mount 8-SOIC Package

Passes stringent Infineon quality and safety standards

Compatibility

Compatible with IGBT and N-Channel MOSFETs

Suitable for Synchronous Half-Bridge Configurations

Application Areas

Switch Mode Power Supplies

Motor Drives

Power Inverters

DC-DC Converters

Product Lifecycle

Status Active

Not nearing discontinuation with ongoing support and availability

Potential for future upgrades and replacements within Infineon's gate driver line-up

Several Key Reasons to Choose This Product

Robust and Reliable Gate Driver for High-Efficiency Power Applications

Excellent Thermal Performance and High-Temperature Operation

Infineon's Reputation for Quality and Long-lifespan Components

Versatility in Driving Both IGBT and N-Channel MOSFETs

Optimized for Rapid Switching with Low Propagation Delays