Manufacturer Part Number
IPT012N08N5ATMA1
Manufacturer
Infineon Technologies
Introduction
The IPT012N08N5ATMA1 is a high-performance N-channel MOSFET transistor from Infineon Technologies, designed for high-power, high-frequency applications.
Product Features and Performance
80V drain-source voltage
2mΩ maximum ON-resistance at 150A, 10V
300A continuous drain current at 25°C case temperature
17,000pF maximum input capacitance at 40V
375W maximum power dissipation at 25°C case temperature
Wide operating temperature range of -55°C to 175°C
Product Advantages
Excellent efficiency and low power losses
High current handling capability
Compact surface-mount package
Reliable and robust design
Key Technical Parameters
Drain-Source Voltage (Vdss): 80V
Gate-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 1.2mΩ @ 150A, 10V
Threshold Voltage (Vgs(th)): 3.8V @ 280A
Input Capacitance (Ciss): 17,000pF @ 40V
Gate Charge (Qg): 223nC @ 10V
Quality and Safety Features
RoHS3 compliant
Optimized for high-reliability applications
Compatibility
The IPT012N08N5ATMA1 is compatible with various high-power, high-frequency applications such as power supplies, motor drives, and industrial automation.
Application Areas
Power Supplies
Motor Drives
Industrial Automation
Renewable Energy Systems
Electric Vehicles
Product Lifecycle
The IPT012N08N5ATMA1 is an active and widely available product from Infineon Technologies. There are no indications of it being near discontinuation, and replacement or upgrade options are readily available.
Key Reasons to Choose This Product
Excellent efficiency and low power losses
High current handling capability
Compact surface-mount package
Reliable and robust design
Wide operating temperature range
RoHS3 compliance for environmental sustainability
