Manufacturer Part Number
IPT007N06NATMA1
Manufacturer
Infineon Technologies
Introduction
The IPT007N06NATMA1 is a N-channel MOSFET transistor from Infineon Technologies' OptiMOS series. It is designed for high-power switching and control applications.
Product Features and Performance
60V drain-to-source voltage
300A continuous drain current at 25°C
75mOhm maximum on-resistance at 150A, 10V
16000pF maximum input capacitance at 30V
375W maximum power dissipation
Operating temperature range of -55°C to 175°C
Product Advantages
High current handling capability
Low on-resistance for low power loss
Compact surface mount package
Wide operating temperature range
Key Technical Parameters
Drain-to-source voltage (Vdss): 60V
Gate-to-source voltage (Vgs): ±20V
On-resistance (Rds(on)): 0.75mOhm @ 150A, 10V
Drain current (Id): 300A @ 25°C
Input capacitance (Ciss): 16000pF @ 30V
Power dissipation (Pd): 375W
Quality and Safety Features
RoHS3 compliant
Designed and manufactured to high quality standards
Compatibility
Compatible with a wide range of power electronic circuits and systems
Application Areas
High-power switching and control applications
Power supplies
Motor drives
Industrial automation
Renewable energy systems
Product Lifecycle
Currently in production
Replacement or upgraded models may be available in the future
Key Reasons to Choose This Product
High current handling and low on-resistance for efficient power conversion
Wide operating temperature range suitable for demanding applications
Compact surface mount package for space-constrained designs
Proven reliability and quality from a leading semiconductor manufacturer
