Manufacturer Part Number
IPT012N06NATMA1
Manufacturer
Infineon Technologies
Introduction
This is a high-performance N-channel MOSFET transistor that is part of Infineon's OptiMOS series.
Product Features and Performance
60V drain-to-source voltage rating
Low on-resistance of 1.2mΩ
Continuous drain current of 240A at 25°C
Wide operating temperature range of -55°C to 175°C
Low input capacitance of 9750pF
High power dissipation of 214W
Product Advantages
Excellent efficiency and thermal performance
Ideal for high-current, high-power density applications
Robust and reliable design
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 60V
Gate-to-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 1.2mΩ
Continuous Drain Current (Id): 240A
Input Capacitance (Ciss): 9750pF
Power Dissipation (Ptot): 214W
Quality and Safety Features
RoHS3 compliant
Surface mount package for high-density applications
Compatibility
This MOSFET is compatible with a wide range of power electronics and motor control applications.
Application Areas
Switch-mode power supplies
Inverters and converters
Motor drives
Industrial automation and control
Electric vehicle systems
Product Lifecycle
This product is currently in active production and availability is good. Infineon has not announced any plans for discontinuation.
Key Reasons to Choose This Product
Excellent efficiency and thermal performance for high-power density applications
Robust and reliable design for demanding industrial environments
Wide operating temperature range and high current handling capability
Small surface mount package for high-density designs
Proven performance in a wide range of power electronics and motor control applications
