Manufacturer Part Number
IPT015N10N5ATMA1
Manufacturer
Infineon Technologies
Introduction
This is a high-performance single N-Channel MOSFET transistor from Infineon's OptiMOS series.
Product Features and Performance
100V Drain-Source Voltage
Very low On-Resistance of 1.5mΩ @ 150A, 10V
Continuous Drain Current of 300A at 25°C
Wide operating temperature range of -55°C to 175°C
Low input capacitance of 16000pF @ 50V
Maximum Power Dissipation of 375W at Tc
Product Advantages
Excellent efficiency and power density
Robust design and high reliability
Compact surface mount package
Optimized for high-current applications
Key Technical Parameters
Drain-Source Voltage (Vdss): 100V
Gate-Source Voltage (Vgs Max): ±20V
On-Resistance (Rds(on) Max): 1.5mΩ @ 150A, 10V
Threshold Voltage (Vgs(th) Max): 3.8V @ 250A
Input Capacitance (Ciss Max): 16000pF @ 50V
Power Dissipation (Max): 375W at Tc
Quality and Safety Features
ROHS3 Compliant
Suitable for high-reliability applications
Compatibility
Compatible with a wide range of high-power electronic systems and power conversion applications.
Application Areas
Power Supplies
Motor Drives
Inverters
Industrial Electronics
Automotive Electronics
Product Lifecycle
This product is currently in active production and is not nearing discontinuation. Replacement and upgrade options are available.
Key Reasons to Choose This Product
Industry-leading low on-resistance for improved efficiency
High current capability and power density
Wide operating temperature range for reliable performance
Compact surface mount package for space-constrained designs
Robust design and high reliability for critical applications
