Manufacturer Part Number
IPT020N10N3ATMA1
Manufacturer
Infineon Technologies
Introduction
High-performance N-channel MOSFET with ultra-low on-resistance and fast switching characteristics.
Product Features and Performance
Optimized for high-efficiency power conversion applications
Extremely low on-resistance of 2mΩ @ 150A, 10V
High current capability of 300A @ 25°C
Wide operating temperature range of -55°C to 175°C
Low input capacitance of 11200pF @ 50V
Maximum power dissipation of 375W @ 25°C
Product Advantages
Enables high-efficiency power conversion designs
Allows for compact and dense power circuit layouts
Suitable for high-current, high-power applications
Robust and reliable performance across wide temperature range
Key Technical Parameters
Drain to Source Voltage (Vdss): 100V
Gate to Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 2mΩ @ 150A, 10V
Continuous Drain Current (Id): 300A @ 25°C
Input Capacitance (Ciss): 11200pF @ 50V
Power Dissipation (Pd): 375W @ 25°C
Quality and Safety Features
ROHS3 Compliant
Optimized for high reliability and rugged performance
Compatibility
Suitable for a wide range of power conversion applications
Application Areas
High-efficiency power supplies
Motor drives
Inverters
Industrial and automotive power electronics
Product Lifecycle
This product is currently in active production
No discontinuation or replacement plans at this time
Key Reasons to Choose This Product
Exceptional power efficiency and performance
Industry-leading low on-resistance
High current capability and wide temperature range
Optimized for compact, high-density power circuit designs
Robust and reliable operation
