Manufacturer Part Number
IPD068N10N3GATMA1
Manufacturer
Infineon Technologies
Introduction
High-performance N-channel MOSFET transistor
Part of the OptiMOS series
Product Features and Performance
Drain to Source Voltage (Vdss) of 100V
Maximum Drain Current (Id) of 90A at 25°C
Low on-state resistance (Rds(on)) of 6.8mOhm at 90A, 10V
Wide operating temperature range of -55°C to 175°C
Fast switching capabilities
High power handling up to 150W
Product Advantages
Efficient power conversion due to low on-state resistance
Reliable operation across wide temperature range
Compact DPak (TO-252-3) surface mount package
Key Technical Parameters
Gate-Source Voltage (Vgs) range: ±20V
Gate Threshold Voltage (Vgs(th)): 3.5V at 90A
Input Capacitance (Ciss): 4910pF at 50V
Gate Charge (Qg): 68nC at 10V
Quality and Safety Features
RoHS3 compliant
Suitable for high-reliability applications
Compatibility
Compatible with a wide range of power supply and motor control circuits
Application Areas
Switching power supplies
Motor drives
Industrial automation and control
Automotive electronics
Product Lifecycle
This product is currently in active production
Replacements or upgrades may be available in the future
Key Reasons to Choose This Product
Excellent efficiency and power density due to low on-state resistance
Reliable operation across wide temperature range
Compact surface mount package for space-constrained designs
Proven performance in a wide range of power electronics applications
IPD060N03LINF