Manufacturer Part Number
IPD068P03L3GATMA1
Manufacturer
Infineon Technologies
Introduction
This product is a P-channel MOSFET transistor from Infineon's OptiMOS series, designed for high-power, high-efficiency applications.
Product Features and Performance
30V drain-source voltage
8mΩ maximum on-resistance at 70A, 10V
70A continuous drain current at 25°C case temperature
Wide operating temperature range of -55°C to 175°C
Low input capacitance of 7720pF at 15V
Maximum power dissipation of 100W at case temperature
Product Advantages
Optimized for high-efficiency power conversion
Low conduction losses
Compact TO-252-3 (D-Pak) package
Suitable for high-current, high-power applications
Key Technical Parameters
Drain-source voltage (Vdss): 30V
Gate-source voltage (Vgs): ±20V
On-resistance (Rds(on)): 6.8mΩ @ 70A, 10V
Continuous drain current (Id): 70A @ 25°C
Input capacitance (Ciss): 7720pF @ 15V
Quality and Safety Features
RoHS3 compliant
Suitable for high-temperature environments
Reliable and robust design
Compatibility
This MOSFET is compatible with a wide range of high-power, high-efficiency applications, such as:
Switch-mode power supplies
Motor drives
Industrial and automotive power electronics
Application Areas
High-power, high-efficiency power conversion
Industrial and automotive electronics
Renewable energy systems
Product Lifecycle
This product is an active and widely used part in Infineon's OptiMOS series. There are no indications of it being discontinued, and replacement or upgrade options are readily available.
Key Reasons to Choose This Product
Excellent performance and efficiency for high-power applications
Compact and reliable TO-252-3 package
Wide operating temperature range for demanding environments
Low conduction losses and high current capability
Compatibility with a variety of high-power electronics applications
IPD06N03LINIFINEON