Manufacturer Part Number
IPD06N03LAG
Manufacturer
Infineon Technologies
Introduction
This is a discrete semiconductor product, specifically a transistor FET, MOSFET single.
Product Features and Performance
N-channel MOSFET with low on-resistance and high current handling capability
Optimized for high-efficiency power conversion applications
Capable of operating at high temperatures up to 175°C
Low input capacitance and gate charge for fast switching
Product Advantages
High power density and efficiency
Reliable and robust design
Suitable for various power conversion applications
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 25V
Maximum Gate-to-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 5.7mΩ @ 30A, 10V
Continuous Drain Current (Id): 50A @ 25°C
Input Capacitance (Ciss): 2653pF @ 15V
Power Dissipation (Tc): 83W
Quality and Safety Features
RoHS3 compliant
Housed in a TO-252-3 (DPak) package
Compatibility
Compatible with various power conversion and control applications
Application Areas
Switched-mode power supplies (SMPS)
Motor drives
Industrial and consumer electronics
Telecom and server power
Product Lifecycle
Currently in production
Replacements and upgrades available as needed
Several Key Reasons to Choose This Product
High current handling and low on-resistance for efficient power conversion
Capable of operating at high temperatures for reliable performance
Fast switching characteristics for high-frequency applications
Robust and reliable design for long-term use
RoHS3 compliance for environmental sustainability