Manufacturer Part Number
IPD060N03LGATMA1
Manufacturer
Infineon Technologies
Introduction
High-performance N-channel MOSFET transistor designed for a variety of power conversion and switching applications.
Product Features and Performance
Low on-resistance for high efficiency
Optimized for high-frequency switching
Robust and reliable design
Excellent thermal characteristics
Product Advantages
Increased power density
Improved system efficiency
Enhanced reliability
Wide operating temperature range
Key Technical Parameters
Drain-Source Voltage (Vdss): 30V
On-Resistance (Rds(on)): 6mΩ @ 30A, 10V
Continuous Drain Current (Id): 50A @ 25°C
Input Capacitance (Ciss): 2400pF @ 15V
Power Dissipation (Tc): 56W
Quality and Safety Features
RoHS3 compliant
Consistent and reliable performance
Designed for high-reliability applications
Compatibility
Suitable for a wide range of power conversion and switching applications
Application Areas
Switch-mode power supplies
Motor drives
Solar inverters
Industrial and consumer electronics
Product Lifecycle
Currently in active production
Availability of replacements and upgrades
Key Reasons to Choose This Product
Excellent efficiency and performance
Robust and reliable design
Wide operating temperature range
Optimized for high-frequency switching
Increased power density and system efficiency
IPD060N03LINF