Manufacturer Part Number
IPD060N03LG
Manufacturer
Infineon Technologies
Introduction
The IPD060N03LG is a high-performance N-channel MOSFET transistor from Infineon Technologies.
Product Features and Performance
30V drain-source voltage
±20V gate-source voltage
6mΩ maximum on-resistance at 30A, 10V
50A maximum continuous drain current at 25°C
2300pF maximum input capacitance at 15V
56W maximum power dissipation at Tc
-55°C to 175°C operating temperature range
Product Advantages
Low on-resistance for high efficiency
High current handling capability
Wide operating temperature range
Compact TO-252-3 (DPAK) package
Key Technical Parameters
MOSFET technology
N-channel FET type
2V maximum gate-source threshold voltage at 250A
Quality and Safety Features
Complies with relevant safety and quality standards
Compatibility
Suitable for a wide range of power electronics applications
Application Areas
Power supplies
Motor drives
Industrial automation
Automotive electronics
Product Lifecycle
Current product
Availability of replacement or upgraded models
Key Reasons to Choose This Product
Excellent performance-to-size ratio
High efficiency and power density
Reliable and durable design
Wide operating temperature range
Compatibility with a variety of applications