Manufacturer Part Number
IPD053N08N3GATMA1
Manufacturer
Infineon Technologies
Introduction
High-performance N-channel MOSFET with low on-resistance for power applications
Product Features and Performance
Optimized for high-efficiency power conversion
Extremely low on-resistance for minimized conduction losses
High current capability up to 90A continuous
Wide operating temperature range from -55°C to 175°C
Product Advantages
Excellent thermal performance
Robust and reliable design
Efficient power conversion
Compact and space-saving package
Key Technical Parameters
Drain-Source Voltage (VDS): 80V
Gate-Source Voltage (VGS): ±20V
On-Resistance (RDS(on)): 5.3mΩ
Continuous Drain Current (ID): 90A
Input Capacitance (Ciss): 4750pF
Power Dissipation (Ptot): 150W
Quality and Safety Features
RoHS3 compliant
Reliable and durable construction
Designed for safety in power applications
Compatibility
Suitable for various power conversion and control applications
Application Areas
Switched-mode power supplies (SMPS)
Motor drives
Inverters
Industrial automation and control
Product Lifecycle
This product is currently available and not nearing discontinuation
Replacement or upgraded versions may be available in the future
Key Reasons to Choose This Product
Excellent efficiency and low conduction losses
High current handling capability
Wide operating temperature range
Compact and space-saving package
Robust and reliable design
Suitable for a variety of power applications
IPD060N03LINF