Manufacturer Part Number
IPD050N10N5ATMA1
Manufacturer
Infineon Technologies
Introduction
The IPD050N10N5ATMA1 is a high-performance N-Channel MOSFET transistor from Infineon Technologies, part of the OptiMOS series.
Product Features and Performance
100V Drain-Source Voltage (Vdss)
5mΩ Maximum On-Resistance (Rds(on))
80A Continuous Drain Current (Id) at 25°C
4700pF Maximum Input Capacitance (Ciss)
150W Power Dissipation (Tc)
Wide Operating Temperature Range: -55°C to 175°C
Product Advantages
Low On-Resistance for Efficient Power Switching
High Current Handling Capability
Compact TO-252-3 (D-Pak) Surface Mount Package
Suitable for High-Power, High-Frequency Applications
Key Technical Parameters
Vdss: 100V
Vgs (Max): ±20V
Rds On (Max) @ Id, Vgs: 5mΩ @ 40A, 10V
Id (Continuous) @ 25°C: 80A
Ciss (Max) @ Vds: 4700pF @ 50V
Power Dissipation (Max): 150W
Quality and Safety Features
RoHS3 Compliant
Tape and Reel Packaging
Compatibility
The IPD050N10N5ATMA1 is designed for use in a wide range of power electronics and power conversion applications.
Application Areas
Switch-Mode Power Supplies (SMPS)
Motor Drives
Inverters
Uninterruptible Power Supplies (UPS)
Industrial Equipment
Product Lifecycle
The IPD050N10N5ATMA1 is a current production device, and Infineon Technologies continues to support and manufacture this model.
Key Reasons to Choose This Product
Excellent performance-to-cost ratio
Optimized for high-power, high-frequency switching applications
Compact, surface-mount packaging for efficient board layout
Robust design and wide operating temperature range
RoHS3 compliance for environmental responsibility
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