Manufacturer Part Number
IPD053N06NATMA1
Manufacturer
Infineon Technologies
Introduction
High-performance N-channel MOSFET with OptiMOS technology
Optimized for high-efficiency power conversion applications
Product Features and Performance
Low on-resistance (RDS(on) = 5.3 mΩ) for low conduction losses
High drain current rating (ID = 45 A) for high power handling
Fast switching speed and low gate charge (Qg = 27 nC) for efficient operation
Wide operating temperature range (-55°C to 175°C)
Product Advantages
Excellent thermal performance and power dissipation (3 W at Ta, 83 W at Tc)
Robust and reliable design for demanding applications
Optimized for high-frequency and high-efficiency power conversion
Key Technical Parameters
Drain-Source Voltage (VDS): 60 V
Gate-Source Voltage (VGS): ±20 V
Continuous Drain Current (ID): 18 A (at Ta), 45 A (at Tc)
Input Capacitance (Ciss): 2000 pF @ 30 V
Gate Charge (Qg): 27 nC @ 10 V
Quality and Safety Features
RoHS3 compliant
Manufactured in a certified, high-quality facility
Compatibility
Compatible with a wide range of power electronic applications
Application Areas
High-efficiency power supplies
Motor drives
Switching power converters
Industrial and automotive electronics
Product Lifecycle
This product is currently in production and is not nearing discontinuation.
Replacement or upgrade options may be available from Infineon or other manufacturers.
Key Reasons to Choose This Product
Excellent performance and efficiency due to low on-resistance and fast switching
Robust and reliable design for demanding applications
Wide operating temperature range for versatile use
Optimized for high-frequency and high-efficiency power conversion
Backed by Infineon's reputation for quality and innovation in power semiconductor solutions