Manufacturer Part Number
IPD050N03LGATMA1
Manufacturer
Infineon Technologies
Introduction
High-performance N-Channel MOSFET transistor designed for efficient power conversion applications
Product Features and Performance
Optimized for high efficiency and low on-resistance
Wide temperature range operation from -55°C to 175°C
Suitable for high current, high switching frequency applications
Low gate charge and fast switching characteristics
Product Advantages
Excellent thermal management for high power handling
Reliable and robust design for demanding applications
Optimized for high efficiency power conversion
Key Technical Parameters
Drain to Source Voltage (Vdss): 30V
Continuous Drain Current (Id): 50A (at 25°C)
On-Resistance (Rds(on)): 5mΩ (at 30A, 10V)
Input Capacitance (Ciss): 3200pF (at 15V)
Power Dissipation (Tc): 68W
Quality and Safety Features
RoHS3 compliant
Reliable and durable construction
Compatibility
Surface mount package (TO-252-3, DPak)
Suitable for high-frequency, high-current power conversion applications
Application Areas
Switching power supplies
Motor drives
Inverters
Industrial and automotive electronics
Product Lifecycle
Current production model, no known discontinuation plans
Replacement or upgraded models may become available in the future
Key Reasons to Choose This Product
Excellent efficiency and low on-resistance for high-performance power conversion
Wide temperature range and robust design for demanding applications
Optimized for high-frequency, high-current operation
Reliable and durable construction for long-term use
Compatibility with surface mount assembly processes