IPB80N06S2L-H5 - Infineon Technologies

Manufacturer Part Number

IPB80N06S2L-H5

Manufacturer

Infineon Technologies

Introduction

High-performance N-Channel MOSFET for power conversion applications

Product Features and Performance

Extremely low on-resistance of 4.7 mOhm

Optimized design for low gate charge and fast switching

Robust and reliable performance

Withstands high drain-source voltage up to 55 V

Continuous drain current of 80 A at 25°C

Product Advantages

Excellent power efficiency

Enables compact and high-density power conversion designs

Reliable operation in harsh environments

Key Technical Parameters

Drain-Source Voltage (Vdss): 55 V

Gate-Source Voltage (Vgs): ±20 V

On-Resistance (Rds(on)): 4.7 mOhm @ 80 A, 10 V

Drain Current (Id): 80 A @ 25°C

Input Capacitance (Ciss): 5000 pF @ 25 V

Power Dissipation (Pd): 300 W @ 25°C

Quality and Safety Features

Qualified to AEC-Q101 automotive standard

Robust design for reliable operation in harsh environments

Compatibility

Suitable for use in a wide range of power conversion applications

Application Areas

Switch-mode power supplies

Motor drives

Inverters

Converters

Product Lifecycle

This product is still in active production and not nearing discontinuation

Replacement or upgrade options may be available in the future

Key Reasons to Choose This Product

Exceptional power efficiency due to ultra-low on-resistance

Optimized design for fast switching and low gate charge

Reliable performance in harsh environments

Enables compact and high-density power conversion designs

Backed by Infineon's reputation for quality and innovation