Manufacturer Part Number
IPB80N06S3-07
Manufacturer
Infineon Technologies
Introduction
This product is a discrete semiconductor transistor, specifically a N-Channel MOSFET.
Product Features and Performance
High current capability of 80A continuous drain current
Low on-resistance of 6.5mOhm
Wide operating temperature range of -55°C to 175°C
High input capacitance of 7768pF
High power dissipation of 135W
Product Advantages
Excellent power efficiency due to low on-resistance
Robust performance across wide temperature range
Suitable for high current applications
Key Technical Parameters
Drain to Source Voltage (Vdss): 55V
Gate to Source Voltage (Vgs) (Max): ±20V
On-Resistance (Rds(on)): 6.5mOhm
Drain Current (Id): 80A
Input Capacitance (Ciss): 7768pF
Power Dissipation (Tc): 135W
Quality and Safety Features
MOSFET technology provides high reliability and ruggedness
Complies with industry safety standards
Compatibility
Surface mount package (TO-263-3, D-Pak)
Suitable for a wide range of power electronics applications
Application Areas
Switching power supplies
Motor drives
Inverters
Industrial automation and control
Product Lifecycle
This product is an active and widely used part
Replacement and upgrade options are available from Infineon
Key Reasons to Choose This Product
High current capability and low on-resistance for excellent power efficiency
Wide operating temperature range for robust performance
Proven MOSFET technology for reliability and safety
Compatibility with various power electronics applications
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