Manufacturer Part Number
IPB80N06S2L07ATMA3
Manufacturer
Infineon Technologies
Introduction
High-performance N-channel MOSFET transistor with low on-resistance and fast switching capabilities.
Product Features and Performance
Extremely low on-resistance (6.7 mΩ) for high efficiency
Capable of handling high continuous drain current (80 A) at 25°C
Fast switching characteristics with low gate charge (130 nC)
Wide operating temperature range of -55°C to 175°C
Suitable for high-frequency and high-power switching applications
Product Advantages
Excellent thermal performance and power handling
Optimized for efficient power conversion
Reliable and robust design for industrial applications
Compact and space-saving surface mount package
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 55 V
Gate-to-Source Voltage (Vgs): ±20 V
Continuous Drain Current (Id): 80 A
On-Resistance (Rds(on)): 6.7 mΩ
Input Capacitance (Ciss): 3160 pF
Power Dissipation (Tc): 210 W
Quality and Safety Features
RoHS3 compliant
Robust and reliable design for industrial applications
Meets high-quality standards of Infineon Technologies
Compatibility
Compatible with a wide range of power electronics and industrial control systems
Application Areas
Switching power supplies
Motor drives
Power inverters
Industrial and automotive electronics
Product Lifecycle
This product is currently in production and not nearing discontinuation.
Replacement and upgrade options are available from Infineon Technologies.
Key Reasons to Choose This Product
Extremely low on-resistance for high efficiency
High continuous current handling capability
Fast switching characteristics for high-frequency applications
Robust and reliable design for industrial use
Wide operating temperature range for diverse applications
Compact and space-saving surface mount package
IPB80N06S208N/A