Manufacturer Part Number
IPB80N06S2L-11
Manufacturer
Infineon Technologies
Introduction
High-performance N-Channel MOSFET transistor with low on-resistance and fast switching capabilities, suitable for a wide range of power conversion and control applications.
Product Features and Performance
Low on-resistance for high efficiency
Fast switching speed for improved system performance
High current handling capability up to 80A
Wide operating temperature range of -55°C to 175°C
Low gate charge for efficient gate drive
Product Advantages
Excellent thermal performance and power dissipation
Robust design for reliable operation
Optimized for high-frequency, high-efficiency power conversion
Suitable for a variety of power applications
Key Technical Parameters
Drain to Source Voltage (Vdss): 55V
Vgs (Max): ±20V
On-Resistance (Rds(on)): 11mΩ @ 40A, 10V
Continuous Drain Current (Id): 80A @ 25°C (Tc)
Input Capacitance (Ciss): 2075pF @ 25V
Power Dissipation (Tc): 158W
Quality and Safety Features
MOSFET technology for high reliability and durability
Strict quality control and testing processes
Compliant with relevant industry standards and regulations
Compatibility
Compatible with a wide range of power supply and control systems
Suitable for various power conversion and control applications
Application Areas
Switch-mode power supplies
Motor drives
Inverters and converters
Industrial automation and control
Product Lifecycle
Currently available in the market
No planned discontinuation at this time
Replacements and upgrades may be available in the future
Key Reasons to Choose This Product
Excellent performance-to-cost ratio
Proven reliability and long-term durability
Optimized for high-efficiency, high-frequency power conversion
Broad compatibility and versatility in various applications
Supported by a reputable manufacturer with strong technical expertise
IPB80N06S2L-05Cypress Semiconductor (Infineon Technologies)