Manufacturer Part Number
IPB80N06S209ATMA1
Manufacturer
Infineon Technologies
Introduction
High-performance N-Channel MOSFET with low on-resistance and fast switching capabilities.
Product Features and Performance
Low on-resistance (8.8mOhm @ 50A, 10V)
High current handling capability (80A continuous drain current)
Fast switching with low gate charge (80nC @ 10V)
Wide operating temperature range (-55°C to 175°C)
Optimized for high-efficiency power conversion applications
Product Advantages
Excellent thermal management and power dissipation (190W @ Tc)
Reliable performance in demanding environments
Minimizes power losses and improves overall system efficiency
Key Technical Parameters
Drain-Source Voltage (Vdss): 55V
Gate-Source Voltage (Vgs): ±20V
Threshold Voltage (Vgs(th)): 4V @ 125A
Input Capacitance (Ciss): 2360pF @ 25V
Quality and Safety Features
RoHS3 compliant
Robust package design (PG-TO263-3-2) for reliable operation
Compatibility
Suitable for a wide range of power conversion, motor control, and industrial applications.
Application Areas
Switching power supplies
Motor drives
Industrial automation
Renewable energy systems
Product Lifecycle
This product is currently available and not nearing discontinuation. Replacement or upgrade options may be available from the manufacturer.
Key Reasons to Choose This Product
Excellent power efficiency and thermal management
High current handling capability for demanding applications
Fast switching performance for improved system responsiveness
Reliable and robust design for long-term operation
Compatibility with a wide range of power conversion systems
IPB80N06S208N/A