Manufacturer Part Number
IPB108N15N3GATMA1
Manufacturer
Infineon Technologies
Introduction
High performance N-channel power MOSFET in TO-263 package
Product Features and Performance
High drain-source voltage rating of 150V
Low on-resistance of 10.8mΩ @ 83A, 10V
High continuous drain current of 83A at 25°C
Wide operating temperature range of -55°C to 175°C
Fast switching with low gate charge of 55nC @ 10V
Product Advantages
Optimized for high efficiency power conversion applications
Excellent thermal performance due to TO-263 package
Robust and reliable design
Key Technical Parameters
Vdss: 150V
Vgs(max): ±20V
Rds(on): 10.8mΩ @ 83A, 10V
Id (cont): 83A @ 25°C
Quality and Safety Features
RoHS3 compliant
Qualified to AEC-Q101 automotive standard
Compatibility
Suitable for a wide range of power conversion applications such as:
Switched-mode power supplies
Motor drives
Inverters
Converters
Application Areas
Industrial electronics
Automotive electronics
Consumer electronics
Product Lifecycle
This product is currently in active production and readily available. Infineon provides ongoing support and potential future upgrades or replacements.
Key Reasons to Choose This Product
High efficiency and power density due to low on-resistance
Robust and reliable design for demanding applications
Wide operating temperature range for flexible system design
Fast switching capability for high-frequency power conversion
Automotive-grade qualification for critical applications