Manufacturer Part Number
IPB110P06LMATMA1
Manufacturer
Infineon Technologies
Introduction
High-performance P-channel power MOSFET
Product Features and Performance
Optimized for high-efficiency power conversion
Low on-state resistance for low conduction losses
High current capability up to 100A
Wide operating temperature range of -55°C to 175°C
Fast switching and low gate charge for high-frequency operation
Product Advantages
Efficient power conversion
Compact design
Reliable performance in harsh environments
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 60V
Maximum Gate-to-Source Voltage (Vgs): ±20V
On-State Resistance (Rds(on)): 11mΩ @ 100A, 10V
Continuous Drain Current (Id): 100A @ 25°C (Tc)
Input Capacitance (Ciss): 8500pF @ 30V
Power Dissipation (Ptot): 300W @ 25°C (Tc)
Quality and Safety Features
RoHS3 compliant
Suitable for high-reliability and safety-critical applications
Compatibility
Mounting: Surface mount (TO-263-3, D-Pak)
Application Areas
Switch-mode power supplies
Motor drives
Electric vehicle power electronics
Industrial and consumer power conversion
Product Lifecycle
This is an active product with no indication of discontinuation
Key Reasons to Choose This Product
High efficiency and low losses for improved system performance
High current capability and wide operating temperature range
Compact surface-mount package for space-constrained designs
Proven reliability in demanding power conversion applications
IPB10N03LBInfineon TechnologiesMOSFET N-CH 30V 50A TO263-3
IPB110P06LMINF