Manufacturer Part Number
IPB110N20N3LFATMA1
Manufacturer
Infineon Technologies
Introduction
High-performance N-channel Power MOSFET
Product Features and Performance
Low on-resistance (RDS(on)) of 11 mΩ (max.) at 88 A, 10 V
High drain current capability of 88 A (Tc)
Low gate charge (Qg) of 76 nC (max.) at 10 V
Wide operating temperature range of -55°C to 150°C
Product Advantages
Excellent efficiency and thermal performance
Suitable for high-power switching applications
Compact and reliable surface mount package
Key Technical Parameters
Drain-Source Voltage (VDS): 200 V
Gate-Source Voltage (VGS): ±20 V
Continuous Drain Current (ID): 88 A (at Tc)
Input Capacitance (Ciss): 650 pF (max.) at 100 V
Power Dissipation (Ptot): 250 W (at Tc)
Quality and Safety Features
RoHS3 compliant
Meets stringent quality and reliability standards
Compatibility
Suitable for a wide range of high-power switching applications, such as:
Power supplies
Motor drives
Inverters
Converters
Application Areas
Industrial
Automotive
Renewable energy
Telecommunications
Product Lifecycle
This product is currently in production and is not nearing discontinuation. Replacement or upgrade options are available if needed.
Key Reasons to Choose This Product
Excellent efficiency and thermal performance for high-power applications
Compact and reliable surface mount package
Wide operating temperature range for demanding environments
High drain current and low on-resistance for improved system performance
Low gate charge for efficient switching and reduced power losses
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