IPB110N20N3LFATMA1 - Infineon Technologies

Manufacturer Part Number

IPB110N20N3LFATMA1

Manufacturer

Infineon Technologies

Introduction

High-performance N-channel Power MOSFET

Product Features and Performance

Low on-resistance (RDS(on)) of 11 mΩ (max.) at 88 A, 10 V

High drain current capability of 88 A (Tc)

Low gate charge (Qg) of 76 nC (max.) at 10 V

Wide operating temperature range of -55°C to 150°C

Product Advantages

Excellent efficiency and thermal performance

Suitable for high-power switching applications

Compact and reliable surface mount package

Key Technical Parameters

Drain-Source Voltage (VDS): 200 V

Gate-Source Voltage (VGS): ±20 V

Continuous Drain Current (ID): 88 A (at Tc)

Input Capacitance (Ciss): 650 pF (max.) at 100 V

Power Dissipation (Ptot): 250 W (at Tc)

Quality and Safety Features

RoHS3 compliant

Meets stringent quality and reliability standards

Compatibility

Suitable for a wide range of high-power switching applications, such as:

Power supplies

Motor drives

Inverters

Converters

Application Areas

Industrial

Automotive

Renewable energy

Telecommunications

Product Lifecycle

This product is currently in production and is not nearing discontinuation. Replacement or upgrade options are available if needed.

Key Reasons to Choose This Product

Excellent efficiency and thermal performance for high-power applications

Compact and reliable surface mount package

Wide operating temperature range for demanding environments

High drain current and low on-resistance for improved system performance

Low gate charge for efficient switching and reduced power losses