IPB117N20NFDATMA1 - Infineon Technologies

Manufacturer Part Number

IPB117N20NFDATMA1

Manufacturer

Infineon Technologies

Introduction

The IPB117N20NFDATMA1 is a high-performance N-channel MOSFET from Infineon Technologies, suitable for a wide range of power electronics applications.

Product Features and Performance

200V drain-source voltage

84A continuous drain current at 25°C

7mΩ maximum on-resistance at 84A, 10V

6650pF maximum input capacitance at 100V

300W maximum power dissipation at Tc

Wide operating temperature range of -55°C to 175°C

Product Advantages

Excellent power handling and efficiency

Low on-resistance for reduced power losses

High current capability for demanding applications

Suitable for high-voltage, high-power switching circuits

Key Technical Parameters

Drain-Source Voltage (Vdss): 200V

Gate-Source Voltage (Vgs): ±20V

On-Resistance (Rds(on)): 11.7mΩ @ 84A, 10V

Continuous Drain Current (Id): 84A @ 25°C

Input Capacitance (Ciss): 6650pF @ 100V

Power Dissipation (Ptot): 300W @ Tc

Quality and Safety Features

RoHS3 compliant

Suitable for high-reliability and safety-critical applications

Compatibility

Compatible with a wide range of power electronics circuits and systems

Application Areas

Switched-mode power supplies

Motor drives

Inverters and converters

Industrial automation and control

Telecommunications equipment

Automotive electronics

Product Lifecycle

This product is currently in production and not nearing discontinuation.

Replacements and upgrades may be available from Infineon Technologies.

Key Reasons to Choose This Product

High power handling and efficiency for demanding applications

Low on-resistance for reduced power losses and improved system performance

Wide operating temperature range for versatile use

Reliable and high-quality construction for long-term operation

Compatibility with a broad range of power electronics circuits and systems