Manufacturer Part Number
IPB120N04S402ATMA1
Manufacturer
Infineon Technologies
Introduction
High-performance N-channel OptiMOS power MOSFET designed for high-power, high-current applications
Product Features and Performance
40V drain-source voltage
120A continuous drain current at 25°C
8mΩ maximum on-resistance at 100A, 10V
Wide operating temperature range of -55°C to 175°C
Low input capacitance of 10,740pF at 25V
High power dissipation of 158W at Tc
Product Advantages
Optimized for high-power, high-current applications
Excellent thermal performance
Low on-resistance for high efficiency
Wide voltage and temperature operating range
Key Technical Parameters
Drain-source voltage: 40V
Gate-source voltage: ±20V
On-resistance: 1.8mΩ @ 100A, 10V
Drain current: 120A continuous at 25°C
Input capacitance: 10,740pF @ 25V
Power dissipation: 158W at Tc
Quality and Safety Features
RoHS3 compliant
Qualified to AEC-Q101 standards for automotive applications
Compatibility
Surface mount package (PG-TO263-3)
Compatible with standard MOSFET gate drivers
Application Areas
High-power motor drives
Power supplies
Inverters
Industrial and automotive electronics
Product Lifecycle
Current product, not nearing discontinuation
Replacements and upgrades available from Infineon
Key Reasons to Choose This Product
Optimized for high-power, high-current applications
Excellent thermal performance and high power dissipation
Low on-resistance for high efficiency
Wide voltage and temperature operating range
Automotive-qualified for reliability and safety