Manufacturer Part Number
IPB107N20NAATMA1
Manufacturer
Infineon Technologies
Introduction
This product is a high-performance N-channel MOSFET transistor from Infineon Technologies, part of the OptiMOS series.
Product Features and Performance
200V drain-to-source voltage rating
88A continuous drain current at 25°C
Ultra-low on-resistance of 10.7mΩ at 88A, 10V
High input capacitance of 7100pF at 100V
Supports up to 300W of power dissipation
Wide operating temperature range of -55°C to 175°C
Product Advantages
Excellent performance in high-power, high-frequency applications
Optimized for efficient power conversion and control
Robust design with high reliability and ruggedness
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 200V
Gate-to-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 10.7mΩ @ 88A, 10V
Continuous Drain Current (Id): 88A @ 25°C
Input Capacitance (Ciss): 7100pF @ 100V
Power Dissipation (Pd): 300W @ Tc
Quality and Safety Features
RoHS3 compliant
Meets stringent quality and reliability standards
Compatibility
This MOSFET is compatible with a wide range of power electronics and control applications.
Application Areas
Switch-mode power supplies
Motor drives
Inductive heating
Uninterruptible power supplies (UPS)
Industrial and automotive electronics
Product Lifecycle
This product is currently in active production and is not nearing discontinuation. Replacement or upgrade options may be available from Infineon.
Key Reasons to Choose This Product
Exceptional performance in high-power, high-frequency applications
Optimized for efficient power conversion and control
Robust and reliable design with a wide operating temperature range
Meets stringent quality and safety standards
Compatibility with a wide range of power electronics and control applications
IPB107N20N3GINFINE0N