Manufacturer Part Number
IPB107N20N3GATMA1
Manufacturer
Infineon Technologies
Introduction
High-performance N-channel MOSFET transistor for power applications
Product Features and Performance
200V drain-source voltage rating
7 mΩ max on-resistance at 88A, 10V
88A continuous drain current at 25°C case temperature
300W max power dissipation
Wide operating temperature range of -55°C to 175°C
Product Advantages
Optimized for high-efficiency power conversion
Excellent thermal performance
Robust design for reliable operation
Key Technical Parameters
Vdss: 200V
Vgs(max): ±20V
Rds(on) max: 10.7 mΩ @ 88A, 10V
Continuous drain current (Id): 88A @ 25°C
Input capacitance (Ciss): 7100 pF @ 100V
Gate charge (Qg): 87 nC @ 10V
Quality and Safety Features
RoHS3 compliant
Suitable for critical power applications
Compatibility
Compatible with various power electronic circuits and systems
Application Areas
Switch-mode power supplies
Motor drives
Inverters
Power factor correction
Telecom and industrial power systems
Product Lifecycle
Currently available, no known discontinuation plans
Key Reasons to Choose This Product
Excellent power handling and efficiency
Robust and reliable performance
Wide operating temperature range
Optimized for high-power, high-frequency applications
RoHS compliance for use in diverse applications
IPB100N08S2L-07INF