Manufacturer Part Number
IPB048N15N5LFATMA1
Manufacturer
Infineon Technologies
Introduction
High-performance N-channel MOSFET with low on-resistance, optimized for high-frequency switching applications.
Product Features and Performance
Optimized for high-frequency switching applications
Low on-resistance for high efficiency
High current capability up to 120A continuous drain current
Low gate charge for fast switching
Wide operating temperature range from -55°C to 150°C
Product Advantages
Excellent thermal performance and power dissipation
Reliable and robust design
Efficient switching for high-frequency applications
Key Technical Parameters
Drain-Source Voltage (Vdss): 150V
Gate-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 4.8mΩ @ 100A, 10V
Continuous Drain Current (Id): 120A @ 25°C
Input Capacitance (Ciss): 380pF @ 75V
Power Dissipation (Ptot): 313W @ 25°C
Quality and Safety Features
RoHS3 compliant
Robust and reliable design for high-stress applications
Compatibility
Surface mount package (PG-TO263-3)
Compatible with high-frequency, high-power switching applications
Application Areas
Switch-mode power supplies
Motor drives
DC-DC converters
Uninterruptible power supplies (UPS)
Industrial and automotive electronics
Product Lifecycle
Current product, no plans for discontinuation
Replacements and upgrades available from Infineon
Key Reasons to Choose This Product
Excellent thermal performance and power dissipation
High current and voltage capabilities
Fast and efficient switching for high-frequency applications
Robust and reliable design for high-stress environments
Wide operating temperature range for diverse applications