IPB042N10N3GATMA1 - Infineon Technologies

Manufacturer Part Number

IPB042N10N3GATMA1

Manufacturer

Infineon Technologies

Introduction

This is a high-performance N-channel MOSFET transistor from Infineon Technologies, designed for a variety of power conversion and motor control applications.

Product Features and Performance

Wide operating temperature range of -55°C to 175°C

Low on-resistance (RDS(on)) of 4.2 mΩ at 50A, 10V

High continuous drain current of 100A at 25°C

Low input capacitance of 8410 pF at 50V

High power dissipation of 214W at case temperature

Product Advantages

Excellent thermal management properties

Efficient power conversion and low power loss

Suitable for high-current, high-power applications

Key Technical Parameters

Drain-to-Source Voltage (VDS): 100V

Gate-to-Source Voltage (VGS): ±20V

Threshold Voltage (VGS(th)): 3.5V at 150A

Drive Voltage (VGS): 6V (max RDS(on)), 10V (min RDS(on))

Gate Charge (Qg): 117 nC at 10V

Quality and Safety Features

RoHS-3 compliant

PG-TO263-3 package with DPak (2 Leads + Tab) design

Compatibility

This MOSFET is compatible with a wide range of power conversion and motor control applications, including industrial, automotive, and consumer electronics.

Application Areas

Switch-mode power supplies

Motor drives

Inverters

Dc-dc converters

Uninterruptible power supplies (UPS)

Product Lifecycle

This product is currently in active production and availability is good. Infineon Technologies regularly releases updated versions and replacements, so customers can expect ongoing support and availability.

Key Reasons to Choose This Product

Excellent thermal management and high power dissipation capabilities

Efficient power conversion with low on-resistance and low power loss

Wide operating temperature range and RoHS-3 compliance for versatile applications

Compact and reliable DPak (2 Leads + Tab) package design

Ongoing product support and availability from a reputable manufacturer, Infineon Technologies